A silicate glass doped PbSe quantum dot (QD) with high concentration is prepared by using a high-temperature melting heat treatment method and taking ZnSe as a precursor of PbSe QD. The transmission electron microscopy (TEM) shows that the QD volume ratio in the glass reaches 2%~4%, which is higher than that of using simple substance Se as a precursor of PbSe. The X-ray diffraction (XRD) measurement shows that the PbSe QD constitute a cubic crystal structure. The measured photoluminescence (PL) spectra shows that the QD glass has strong photoluminescence emission, with full width at half maximum (FWHM) in the range from 1400 nm to 2600 nm. Under the same heat treatment condition, both the PL peak intensity and the FWHM are greater than that of simple substance Se. Instead of Se, ZnSe can avoid vaporization of Se component in high temperature, and be beneficial to crystallization of PbSe QDs in the glass due to the remaining Zn forming ZnO, as a result, QD concentrations in the glass is increased. The PbSe QD glass, with high doping concentration, can be used for preparing IR fiber optical amplifiers with broadband and high gain.