Infrared and Laser Engineering, Volume. 47, Issue 10, 1003004(2018)
Research progress of GaSb based optically pumped semiconductor disk lasers(invited)
GaSb based optically pumped semiconductor disk lasers (OP-SDLs) attracts considerable attention in novel mid-infrared laser device research field for their potential excellent beam quality and high output power. The epitaxy structure and basic principle of GaSb based OP-SDLs wafers were summarized. The development of GaSb based OP-SDLs at 2 μm wavelength was reviewed respectively by analyzing the aspects of wavelength extending, power scaling, line-width narrowing, short-pulse generation and effective thermal management. The technical development direction and application prospects of this type of laser were discussed.
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Shang Jinming, Zhang Yu, Yang Cheng′ao, Xie Shengwen, Huang Shushan, Yuan Ye, Zhang Yi, Shao Fuhui, Xu Yingqiang, Niu Zhichuan. Research progress of GaSb based optically pumped semiconductor disk lasers(invited)[J]. Infrared and Laser Engineering, 2018, 47(10): 1003004
Category: 特约专栏-“红外半导体激光器”
Received: May. 7, 2018
Accepted: Jun. 12, 2018
Published Online: Nov. 25, 2018
The Author Email: Jinming Shang (shangjinming@semi.ac.cn)