InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. Laser output power reached 962 mW in continuous wave mode at room temperature from 100 μm stripe lasers with a wavelength of 1297 nm and a maximum slope efficiency of 0.42 W/A at 1.5 A current. The threshold current density was 256 A/cm2. The characteristic temperature of the lasers was 138 K in the linear region (20～80 ℃). The lasers operated up to 100 ℃.