Acta Optica Sinica, Volume. 24, Issue 2, 264(2004)
Sensitization of Ga3+ Ion on the Characteristic Fluorescence of Tb3+∶YAG Layers Grown by LPE
Tb3+∶YAGG monocrystalline layers are grown by liquid phase epitaxy (LPE) method. The study of sensitization of Ga3+ on the fluorescent properties of those epitaxially grown Tb3+∶YAGG layers are presented. The doping of Ga3+ in YAG with the replacement of a portion of Al3+ can give quite improvement on the brightness and the saturation characteristics of Tb3+
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[in Chinese], [in Chinese], [in Chinese]. Sensitization of Ga3+ Ion on the Characteristic Fluorescence of Tb3+∶YAG Layers Grown by LPE[J]. Acta Optica Sinica, 2004, 24(2): 264
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