Acta Optica Sinica, Volume. 29, Issue 5, 1336(2009)
Electric-Field-Induced Linear Electro-Optic Effect in Silicon
Based on classical polarization theory, the change of refractive index of silicon is analyzed when direct-current (dc) electric field, alternating-current (AC) modulation electric field, and optical field exist simultaneously, and the physical nature of the electric-field-induced linear electro-optic effect is theoretically indicated. Near-intrinsic silicon is constructed into a metal-insulator-semiconductor sample, and a transverse electro-optic modulation system composed of the modified Senarmont compensator is applied. The obvious linear electro-optic modulation signal is observed in the space charge region of silicon, and the half-wave voltage of the modulation system less than 170 V is estimated. The electric-field-induced linear electro-optic effect caused by the built-in electric field in silicon is experimentally demonstrated. In addition, the secondary electro-optic modulation signal generated by Kerr effect, and electric signal which changes with the cosine function of double azimuth of the linear polarizaed light and is induced by electric-field-induced optical rectification, are measured. These results are in good accordance with the classical polarization theory, and demonstrate the electric-field-induced linear electro-optic effect indirectly.
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Chen Zhanguo, Zhao Jianxun, Zhang Yuhong, Jia Gang, Liu Xiuhuan, Ren Ce, Wu Wenqing, Sun Jianbo, Cao Kun, Wang Shuang, Shi Bao. Electric-Field-Induced Linear Electro-Optic Effect in Silicon[J]. Acta Optica Sinica, 2009, 29(5): 1336