Journal of Advanced Dielectrics, Volume. 13, Issue 2, 2350002(2023)

Microstructure regulation and failure mechanism study of BaTiO3-based dielectrics for MLCC application

Yan Gu*, Faqiang Zhangaff***, Wanghua Wu*, and Zhifu Liuaff******
Author Affiliations
  • CAS Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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    Most widely used dielectrics for MLCC are based on BaTiO3 composition which inevitably shows performance degradation during the application due to the migration of oxygen vacancies (Vo). Here, the BaTiO3, (Ba0.97Ca0.03)TiO3, Ba(Ti0.98Mg0.02)O3, (Ba0.97Ca0.03)(Ti0.98Mg0.02)O3, (Ba0.96Ca0.03Dy0.01)(Ti0.98Mg0.02)O3 ceramics (denoted as BT, BCT, BTM, BCTM and BCDTM, respectively) were prepared by a solid-state reaction method. The core-shell structured grains (200 nm) featured with 10-20 nm wide shell were observed and contributed to the relatively flat dielectric constant-temperature spectra of BTM, BCTM and BCDTM ceramics. The TSDC study found that the single/ mix doping of Ca2+, especially the Mg2+, Mg2+/Ca2+ and Mg2+/Ca2+/Dy3+ could limit the emergence of Vo during the sintering and suppress its long-range migration under the electric-field. Because of this, the highly accelerated lifetimes of the ceramics were increased and the value of BCDTM is 377 times higher than that of BT ceramics. The pn junction model was built to explain the correlation mechanism between the long-range migration of Vo and the significantly increased leakage current of BT-based dielectrics in the late stage of HALT.

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    Yan Gu, Faqiang Zhang, Wanghua Wu, Zhifu Liu. Microstructure regulation and failure mechanism study of BaTiO3-based dielectrics for MLCC application[J]. Journal of Advanced Dielectrics, 2023, 13(2): 2350002

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    Paper Information

    Category: Research Articles

    Received: Oct. 25, 2022

    Accepted: Dec. 9, 2022

    Published Online: Jun. 16, 2023

    The Author Email: Gu Yan (zhangfq@mail.sic.ac.cn), Zhang Faqiang (zhangfq@mail.sic.ac.cn), Wu Wanghua (zhangfq@mail.sic.ac.cn), Liu Zhifu (liuzf@mail.sic.ac.cn)

    DOI:10.1142/S2010135X23500029

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