320×256 GaAs/AlGaAs quantum well infrared photodetector

Infrared and Laser Engineering, Volume. 37, Issue 1, 42(2008)

[in Chinese]^*

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[in Chinese]. 320×256 GaAs/AlGaAs quantum well infrared photodetector[J]. Infrared and Laser Engineering, 2008, 37(1): 42

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Received: Apr. 10, 2007

Accepted: Jun. 5, 2007

Published Online: Aug. 17, 2008

The Author Email: (史衍丽(1969-)女研究员博士研究方向为红外物理及其器)

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