Acta Optica Sinica, Volume. 35, Issue 5, 523001(2015)
Sensing Model and Performance of the Surface Defect Photonic Crystal with Porous Silicon
The photonic crystal structure containing surface defect with porous silicon is proposed, in which the defect cavity on the surface is established by introducing the porous silicon layer and the absorbing medium layer, and the sensing region of the sample detected is formed by the use of the efficient carrying mechanism of the porous silicon. Because of the absorption of ZnS, the light corresponding to the resonant wavelength is absorbed and the defect peak is obtained in the reflection spectrum. The back propagation neural network is adopted to optimize the thickness of porous silicon globally. The relationship model between the concentration of the sample detected and the defect peak wavelength is established according to the Goos-Hanchen shift and the sensing performance is analyzed. The simulation results show that the reflectivity of the defect peak decreases from 31.23% to 0.00129% and the Q value can attain to 1537.37 after the optimal design of structural parameter. The sensitivity of the sensor structure is about 2.5 nm at per 1% mass fraction, which can provide effective theory guidance for the detection of the concentration and composition of samples.
Get Citation
Copy Citation Text
Chen Ying, Fan Huiqing, Wang Wenyue, Zhu Qiguang, Chen Weidong. Sensing Model and Performance of the Surface Defect Photonic Crystal with Porous Silicon[J]. Acta Optica Sinica, 2015, 35(5): 523001
Category: Optical Devices
Received: Oct. 20, 2014
Accepted: --
Published Online: Apr. 28, 2015
The Author Email: Ying Chen (chenying@ysu.edu.cn)