Laser & Optoelectronics Progress, Volume. 49, Issue 5, 51601(2012)
Al Contents of AlxGa1-xN Epitaxial Films Studied by Photoluminescence Technique
Deep-ultraviolet photoluminescence technique is used to investigate the band gaps of AlxGa1-xN epitaxial films. The bowing parameter of AlxGa1-xN is studied by CASTEP module of Material Studio simulation software and the Al molar fractions of AlxGa1-xN epitaxial films are researched. The result shows that the HeAg laser with 224.3 nm emission wavelength can make AlxGa1-xN material produce luminescence. The bowing parameter of AlxGa1-xN epitaxial film is calculated with CASTEP software simulation to be 1.01462±0.06772 eV, from which we can calculate the Al molar fractions of AlxGa1-xN epitaxial films.
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Wang Xuerong, Wei Liping, Zheng Huibao, Liu Yunchuan, Zhou Yanping, Meng Xiangyan. Al Contents of AlxGa1-xN Epitaxial Films Studied by Photoluminescence Technique[J]. Laser & Optoelectronics Progress, 2012, 49(5): 51601
Category: Materials
Received: Oct. 11, 2011
Accepted: --
Published Online: Feb. 8, 2012
The Author Email: Xuerong Wang (wangxuerong19851228@126.com)