The P N junctions were produced by pulsed 1.06 μm Nd:YAG laser induced diffusion of Zn into substrate GaAs with solid state diffusion source. The performance parameters of the P N junctions such as X j and C(x,t,T) are presented as the functions of the laser pulse number N and the power density of the exposed region. The experimental results show that junction depth X j reaches submicrometer and the dopant concentration is of the order of 10 20 cm -3.