Journal of Advanced Dielectrics, Volume. 13, Issue 5, 2350014(2023)

High entropy dielectrics

Liangchen Fan*... Yuanxun Li*, Jie Li*, Quanjun Xiang*, Xiaohui Wang*, Tianlong Wen*, Zhiyong Zhong* and Yulong Liao* |Show fewer author(s)
Author Affiliations
  • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China
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    High entropy oxides (HEO) are single-phase solid solutions which are formed by the incorporation of five or more elements into a cationic sublattice in equal or near-equal atomic proportions. Its unique structural features and the possibility of targeted access to certain functions have attracted great interest from researchers. In this review, we summarize the recent advances in the electronic field of high-entropy oxides. We emphasize the following three fundamental aspects of high-entropy oxides: (1) The conductivity mechanism of metal oxides; (2) the factors affecting the formation of single-phase oxides; and (3) the electrical properties and applications of high-entropy oxides. The purpose of this review is to provide new directions for designing and tailoring the functional properties of relevant electronic materials via a comprehensive overview of the literature on the field of high-entropy oxide electrical properties.

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    Liangchen Fan, Yuanxun Li, Jie Li, Quanjun Xiang, Xiaohui Wang, Tianlong Wen, Zhiyong Zhong, Yulong Liao. High entropy dielectrics[J]. Journal of Advanced Dielectrics, 2023, 13(5): 2350014

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    Paper Information

    Category: Research Articles

    Received: Feb. 11, 2023

    Accepted: Apr. 24, 2023

    Published Online: Nov. 21, 2023

    The Author Email: Fan Liangchen (yulong.liao@uestc.edu.cn), Li Yuanxun (yulong.liao@uestc.edu.cn), Li Jie (yulong.liao@uestc.edu.cn), Xiang Quanjun (yulong.liao@uestc.edu.cn), Wang Xiaohui (yulong.liao@uestc.edu.cn), Wen Tianlong (yulong.liao@uestc.edu.cn), Zhong Zhiyong (yulong.liao@uestc.edu.cn), Liao Yulong (yulong.liao@uestc.edu.cn)

    DOI:10.1142/S2010135X23500145

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