Journal of Inorganic Materials, Volume. 37, Issue 7, 717(2022)

Inhibition of Lattice Thermal Conductivity of ZrNiSn-based Half-Heusler Thermoelectric Materials by Entropy Adjustment

Pengjiang WANG1, Huijun KANG1、*, Xiong YANG1, Ying LIU2, Cheng CHENG1, and Tongmin WANG1
Author Affiliations
  • 11. Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
  • 22. Key Laboratory of Material Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China
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    The thermoelectric properties of ZrNiSn-based half-Heusler materials were hindered due to their high thermal conductivity. In order to reduce the lattice thermal conductivity, the high-entropy alloys ZrNiSn and Zr0.5Hf0.5Ni1-xPtxSn (x=0, 0.1, 0.15, 0.2, 0.25, 0.3) were prepared by levitation melting and spark plasma sintering. Configurational entropy of the alloys was manipulated by Hf substitution for Zr and Pt substitution for Ni. Effects of configuration entropy on the thermoelectric properties were investigated. The reslults showed that the minimum sum of lattice thermal conductivity and bipolar thermal conductivity (κl+κb) at 673 K for Zr0.5Hf0.5Ni0.85Pt0.15Sn was optimized at 2.1 W·m-1·K-1, which was significantly reduced by about 58% when compared with ZrNiSn. This finding provides an effective strategy for reducing lattice thermal conductivity of ZrNiSn-based alloy to offer great potential for further improvement of thermoelectrics.

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    Pengjiang WANG, Huijun KANG, Xiong YANG, Ying LIU, Cheng CHENG, Tongmin WANG. Inhibition of Lattice Thermal Conductivity of ZrNiSn-based Half-Heusler Thermoelectric Materials by Entropy Adjustment[J]. Journal of Inorganic Materials, 2022, 37(7): 717

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    Paper Information

    Category: RESEARCH ARTICLE

    Received: Oct. 5, 2021

    Accepted: --

    Published Online: Jan. 10, 2023

    The Author Email: KANG Huijun (kanghuijun@dlut.edu.cn)

    DOI:10.15541/jim20210610

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