Chinese Physics B, Volume. 29, Issue 10, (2020)
Investigation of single event effect in 28-nm system-on-chip with multi patterns
Single event effects (SEEs) in a 28-nm system-on-chip (SoC) were assessed using heavy ion irradiations, and susceptibilities in different processor configurations with data accessing patterns were investigated. The patterns included the sole processor (SP) and asymmetric multiprocessing (AMP) patterns with static and dynamic data accessing. Single event upset (SEU) cross sections in static accessing can be more than twice as high as those of the dynamic accessing, and processor configuration pattern is not a critical factor for the SEU cross sections. Cross section interval of upset events was evaluated and the soft error rates in aerospace environment were predicted for the SoC. The tests also indicated that ultra-high linear energy transfer (LET) particle can cause exception currents in the 28-nm SoC, and some even are lower than the normal case.
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Wei-Tao Yang, Yong-Hong Li, Ya-Xin Guo, Hao-Yu Zhao, Yang Li, Pei Li, Chao-Hui He, Gang Guo, Jie Liu, Sheng-Sheng Yang, Heng An. Investigation of single event effect in 28-nm system-on-chip with multi patterns[J]. Chinese Physics B, 2020, 29(10):
Received: May. 7, 2020
Accepted: --
Published Online: Apr. 21, 2021
The Author Email: Li Yong-Hong (yonghongli@mail.xjtu.edu.cn)