Two type-II superlattices [InAs (10 monolayer, 10 ML)/GaSb (10 ML)] with 10 and 20 periods are grown on GaAs substrates via molecular beam epitaxy and growth interruption method based on the control of the shutter switch sequence. In the experiment, the regulation and analysis of the growth parameters are based on software simulation. The simulation denotes that As-Sb substitution is efficient and the stress of the interface is effectively reduced. Further, the surface morphologies of the superlattice samples are tested and characterized by the double-crystal X-ray diffraction and atomic force microscopy. The stresses of the superlattice samples of InAs and GaSb are reduced to 0.64% and 0.56%, respectively, and the root mean square roughnesses are 0.81 nm and 0.45 nm, respectively. The results indicate that this technique is useful for the fabrication of devices.