GaN-based light-emitting diodes (LED) thin films were successfully transferred from the original Si(111) substrate to Si substrate via bonding,copper substrate and copper-chromium substrate via electroplating respectively,and then the vertical-structure LED were fabricated. The aging characteristic of those LED was investigated. The result indicated that the devices of copper substrate have the most stable photoelectric properties. These different performances were attributed to the different stress states and thermal conductivities,and it was possible that the main influencing factor of reliability of LED was the stress state of the device.