Spectroscopy and Spectral Analysis, Volume. 39, Issue 8, 2371(2019)

Study on Raman Spectra and Fluorescence Spectra of Tb-Doped Aluminosilicates

ZHENG Bao-feng1、*, YANG Xiao-yun2,3, MIN Chun-gang2,3, CUI Xiao-ying2,3, and DONG Kun2,3
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    CaAl2Si2O8∶xTb was prepared by the high temperature solid state reaction method. The fluorescence intensity is the strongest when the sintering temperature is 1 350 ℃. The X-ray diffraction patterns show that the base material in the system is CaAl2Si2O8, and the Tb element exists in Ca2Tb8(SiO4)6O2 phase. Raman spectrum shows that the vibration peak at 870 cm-1 is related to the stretching vibration between Tb atom and silicon tetrahedron in Ca2Tb8(SiO4)6O2, and the bending vibration between Tb atom and silicon tetrahedron produces 408 cm-1 vibration peak. With the increase of Tb doping content, the intensity of Raman vibration peak, the intensity of fluorescence spectrum measured by fluorescence spectrophotometer and Raman spectrophotometer increased first and then decreased. The amount of Tb matching with silicon-oxygen tetrahedron in the system increases gradually. When Tb doping exceeds a certain limit, concentration quenching occurs in the system, resulting in a decrease in fluorescence performance. Using 325 nm laser as excitation source, the fluorescence peak shape produced by Raman spectrometer Photoluminescence spectrum mode is consistent with the spectrum curve of traditional fluorescence spectrophotometer, but its spectral resolution is obviously stronger than that obtained by traditional fluorescence spectrophotometer, which is helpful to distinguish fine level transition phenomena.

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    ZHENG Bao-feng, YANG Xiao-yun, MIN Chun-gang, CUI Xiao-ying, DONG Kun. Study on Raman Spectra and Fluorescence Spectra of Tb-Doped Aluminosilicates[J]. Spectroscopy and Spectral Analysis, 2019, 39(8): 2371

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    Paper Information

    Received: Nov. 5, 2018

    Accepted: --

    Published Online: Sep. 2, 2019

    The Author Email: Bao-feng ZHENG (752611521@qq.com)

    DOI:10.3964/j.issn.1000-0593(2019)08-2371-06

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