Acta Optica Sinica, Volume. 10, Issue 3, 206(1990)
High-To InGaAsP semiconductor laser with large optical cavity
A laser with the large optical cavity (LOC) configuration has beed designed and fabricated taking account of the various factors which have an effect on temperature characteristics of the InGaAsP-InP lasers. The experiments show that such a configuration imporves temperature stability of the laser. The devices with lower threshold current (Jth=2.5KA/cm2 for the broad-area contacts), high power (3W in pulsed operation). and high T0 (150K) have been obtained.
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[in Chinese], [in Chinese], [in Chinese]. High-To InGaAsP semiconductor laser with large optical cavity[J]. Acta Optica Sinica, 1990, 10(3): 206
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