The Indium antimonide (InSb) focal plane detector is a kind of detector widely used in the field of medium-wave infrared detection. As the basis for preparing detectors, the quality and performance of InSb crystal materials are particularly important. In recent years, InSb crystal materials have been also developing towards high quality and large size. Through crucible design and temperature field design, InSb single crystals with a diameter greater than 135 mm were grown by the Czochralski method. The test results show that the dislocation density of the 5-inch wafer is less than 50 cm-2, and the full width at half maxima of the double-crystal diffraction peak is 832 arcsec, indicating that the crystal has good integrity. By optimizing the process parameters, the crystal has a relatively flat solid-liquid interface during the growth process, showing good radial electrical uniformity. This lays a foundation for the preparation of InSb infrared detectors with low-cost and ultra-large scale arrays.