We have measured the temperature dependence photoluminescence (PL) of quantum dots (QDs) with/without AlAs cap grown on (113)B and (100) GaAs substrates by molecular beam epitaxy. The carrier thermal transfer was investigated by analyzing the integrated intensity, peak energy, and FWHM of PL spectra. For QDs grown on (113)B GaAs without AlAs cap, PL quenching can be explained as carriers are easily escape from QDs to WL. However, for QD grown on (113)B GaAs with AlAs, the carriers might escape out of the QDs into non-radiation centres in the QD-WL layer or QD-barrier interface. Temperature dependence PL peak energy of QD close to the temperature dependence of bulk InAs band gap, suggesting that the carriers transfer through WL has been inhibited since the WL was removed or reduced due to phase separation by AlAs cap. For QDs with AlAs cap grown on (100) GaAs, similar FWHM dependence to QD without AlAs cap were observed, indicating that the reduction of WL due to phase separation by AlAs might not as effective as that of (113)B GaAs.