Chinese Journal of Quantum Electronics, Volume. 18, Issue 3, 278(2001)

Effect of the Modulated Doping on the Work Voltage of HB-LED

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    Based on the results of AlGaInP LED samples measured by electro-chemical C-V profiler and their work voltages,we analyzed the contact-voltage difference from the homo-junctions,such as N+-N and P+-P junction,pointed out that the carrier density distribution of the modulated doping have a distinctive effect on the work voltage of HB-LED,and presented the method decreasing further HB-LED's work voltage.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of the Modulated Doping on the Work Voltage of HB-LED[J]. Chinese Journal of Quantum Electronics, 2001, 18(3): 278

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    Received: Jan. 15, 2001

    Accepted: --

    Published Online: May. 15, 2006

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