Chinese Journal of Quantum Electronics, Volume. 18, Issue 3, 278(2001)
Effect of the Modulated Doping on the Work Voltage of HB-LED
Based on the results of AlGaInP LED samples measured by electro-chemical C-V profiler and their work voltages,we analyzed the contact-voltage difference from the homo-junctions,such as N+-N and P+-P junction,pointed out that the carrier density distribution of the modulated doping have a distinctive effect on the work voltage of HB-LED,and presented the method decreasing further HB-LED's work voltage.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of the Modulated Doping on the Work Voltage of HB-LED[J]. Chinese Journal of Quantum Electronics, 2001, 18(3): 278