The influence of interface-continuity of nodules that initiate from 2 μm SiO2 particles on the damaging behaviors of HfO2/SiO2 high reflective coatings is discussed. Two kinds of films with different thickness are manufactured using ion-assistant deposition (IAD) technique. These films have similar distribution of electronic field and absorption; however, the film with larger thickness (double times) has better interface-continuity. The two kinds of films with engineered defects are irradiated by the 1064 nm(10 ns) laser pulse in the way of raster scan. It is found that the nodules in thicker films had higher initial damage threshold and the damage process is relatively slower. It is shown that for the SiO2 particle with diameter of 2 μm, the continuity of the interface between the nodular defects and surrounding layers become better with the increasing film’s thickness, and its resistance to the laser-irradiation also increased.