Optoelectronics Letters, Volume. 12, Issue 6, 430(2016)

Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO4

Gao SHEN1,*... Zuo-han LI2 and Ming HAN2 |Show fewer author(s)
Author Affiliations
  • 1Center for Medical Device Evaluation, China Food and Drug Administration, Beijing 100044, China
  • 2Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Laser, School of Science, Beijing Jiaotong University, Beijing 100044, China
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    Combining the self-stimulated Raman scattering technology and saturable absorber of Cr4+:YAG, a 1.17 μm c-cut Nd:GdVO4picosecond Q-switched laser is demonstrated in this paper. With an incident pump power of 10 W, the Q-switched laser with average power of 430 mW for 1.17 μm, pulse width of 270 ps, repetition rate of 13 kHz and the first order Stokes conversion efficiency of 4.3% is obtained. The Q-switched pulse width can be the narrowest in our research. In addition, the yellow laser at 0.58 μm is also achieved by using the LiB3O5 frequency doubling crystal.

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    SHEN Gao, LI Zuo-han, HAN Ming. Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO4[J]. Optoelectronics Letters, 2016, 12(6): 430

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    Paper Information

    Received: Sep. 6, 2016

    Accepted: --

    Published Online: Oct. 12, 2017

    The Author Email: Gao SHEN (shengaobj1@163.com)

    DOI:10.1007/s11801-016-6191-2

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