Acta Optica Sinica, Volume. 34, Issue 11, 1131001(2014)
Research on Photoluminescence Properties of InGaAs/GaAs Strained Quantum Well
Strained InGaAs/GaAs single quantum wells (SQWs) are grown by the low pressure metal-organic chemieal vapor deposition (LP-MOCVD). The experimental results show that the photoluminescence (PL) emission of InGaAs/GaAs SQW can be greatly improved by optimizing the growth rate, V/III ratio and temperature. It is found that the QW structures grown at the growth temperature of 600 ℃ and the growth rate of 1.15 μm/h exhibit better PL emission, stronger PL intensity with higher V/III ratio. The reason why the blue shift phenomenon of PL spectrum disappear when the InGas ratio is higher is explained by a model.
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Dai Yin, Li Lin, Yuan Huibo, Qiao Zhongliang, Kong Lingyi, Gu Lei, Liu Yang, Li Te, Qu Yi, Liu Guojun. Research on Photoluminescence Properties of InGaAs/GaAs Strained Quantum Well[J]. Acta Optica Sinica, 2014, 34(11): 1131001
Category: Thin Films
Received: Apr. 1, 2014
Accepted: --
Published Online: Oct. 8, 2014
The Author Email: Yin Dai (daiyingaa11@163.com)