Polycrystalline silicon (poly-Si) thin-films were made on planar and textured glass substrates by aluminum-induced crystallization (AIC) of in situ amorphous silicon (a-Si) deposited by DC-magnetron.The poly-Si films were characterized by Raman spectroscopy,X-ray diffraction (XRD) and atomic force microscopy (AFM).A narrow and symmetrical Ranman peak at the wave number of about 521 cm^-1 was observed for all samples,indicating that the films were fully crystallized.XRD results show that the crystallites in the authors’ AIC poly-Si films were preferably (111) oriented.The measurement of full width at half maximum (FWHW) of (111) XRD peaks showed that the quality of the films was affected by the a-Si deposition temperature and the surface morphology of the glass substrates.It is likely that an a-Si deposition temperature of 200℃ seems to be ideal for the preparation of poly-Si films by AIC.