International Journal of Extreme Manufacturing, Volume. 3, Issue 3, 35202(2021)

Rapid subsurface damage detection of SiC using inductivity coupled plasma

Yi Zhan1...2, Linfeng Zhang1, Keyu Chen1, Dianzi Liu2, Dong Lu1 and Hui Deng1,* |Show fewer author(s)
Author Affiliations
  • 1Department of Mechanical and Energy Engineering, Southern University of Science and Technology, No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, People’s Republic of China
  • 2School of Engineering, Faculty of Science, University of East Anglia, Norwich Research Park, Norwich NR4 7TJ, United Kingdom
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    This paper proposes a method for the rapid detection of subsurface damage (SSD) of SiC using atmospheric inductivity coupled plasma. As a plasma etching method operated at ambient pressure with no bias voltage, this method does not introduce any new SSD to the substrate. Plasma diagnosis and simulation are used to optimize the detection operation. Assisted by an SiC cover, a taper can be etched on the substrate with a high material removal rate. Confocal laser scanning microscopy and scanning electron microscope are used to analyze the etching results, and scanning transmission electron microscope (STEM) is adopted to confirm the accuracy of this method. The STEM result also indicates that etching does not introduce any SSD, and the thoroughly etched surface is a perfectly single crystal. A rapid SSD screening ability is also demonstrated, showing that this method is a promising approach for the rapid detection of SSD.

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    Yi Zhan, Linfeng Zhang, Keyu Chen, Dianzi Liu, Dong Lu, Hui Deng. Rapid subsurface damage detection of SiC using inductivity coupled plasma[J]. International Journal of Extreme Manufacturing, 2021, 3(3): 35202

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    Paper Information

    Received: Jan. 2, 2021

    Accepted: --

    Published Online: Jan. 10, 2022

    The Author Email: Deng Hui (dengh@sustech.edu.cn)

    DOI:10.1088/2631-7990/abff34

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