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Semiconductor Optoelectronics, Volume. 44, Issue 3, 350(2023)

Design of Readout Circuit Based on 640×512-5 μm InGaAs Shortwave Infrared Focal Plane

LU Yifan1,2,3, WANG Hongyi1,2,3, TAO Wengang1,2,3,4, CAO Jiasheng1,2,3, TIAN Yu1,2,3,4, JING Song1,2, HUANG Songlei1,2、*, and LI Xue1,2
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    LU Yifan, WANG Hongyi, TAO Wengang, CAO Jiasheng, TIAN Yu, JING Song, HUANG Songlei, LI Xue. Design of Readout Circuit Based on 640×512-5 μm InGaAs Shortwave Infrared Focal Plane[J]. Semiconductor Optoelectronics, 2023, 44(3): 350

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    Received: Jan. 5, 2023

    Accepted: --

    Published Online: Nov. 26, 2023

    The Author Email: Songlei HUANG (huangsl@mail.sitp.ac.cn)

    DOI:10.16818/j.issn1001-5868.2023010501

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology