INFRARED, Volume. 41, Issue 7, 1(2020)

Research on Energy Levels of Narrow Bandgap Semiconductor Material by Photoluminescence Spectra

Chen SHEN*, Qian LI, Peng ZHOU, and Hai-yan YANG
Author Affiliations
  • [in Chinese]
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    [8] Shao J, Lv X, Guo S, et al. Impurity levels and Bandedge Electronic Structure in As-grown Arsenic-doped HgCdTe by Infrared Photoreflectance Spectroscopy [J]. Physical Review B, 2009, 80(15): 155125.

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    SHEN Chen, LI Qian, ZHOU Peng, YANG Hai-yan. Research on Energy Levels of Narrow Bandgap Semiconductor Material by Photoluminescence Spectra[J]. INFRARED, 2020, 41(7): 1

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    Paper Information

    Received: Jun. 18, 2020

    Accepted: --

    Published Online: Nov. 3, 2020

    The Author Email: Chen SHEN (



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