Researching | Growth and characterization ofβ-Ga2O3 thin films grown on off-angled Al2O3 substrates by metal-organic chemical vapor deposition

Journal of Semiconductors, Volume. 43, Issue 9, 092801(2022)

Growth and characterization ofβ-Ga₂O₃ thin films grown on off-angled Al₂O₃ substrates by metal-organic chemical vapor deposition

Yabao Zhang^1,2, Jun Zheng^1,2、*, Peipei Ma^1,2, Xueyi Zheng^1,3, Zhi Liu^1,2, Yuhua Zuo^1,2, Chuanbo Li³, and Buwen Cheng^1,2

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³School of Science, Minzu University of China, Beijing 100081, China

show less

Full Text Get PDF

Figures&Tables (6)

References (28)

Paper Information

References(28)

[1] Y J Jeong, J Y Yang, C H Lee et al. Fluorine-based plasma treatment for hetero-epitaxialβ-Ga2O3 MOSFETs. Appl Surf Sci, 558, 149936(2021).

[2] P R Jubu, F K Yam. Development and characterization of MSM UV photodetector based on gallium oxide nanostructures. Sens Actuator A, 312, 112141(2020).

[3] Y J Lv, X Y Zhou, S B Long et al. Enhancement-modeβ-Ga2O3 metal-oxide-semiconductor field-effect transistor with high breakdown voltage over 3000 V realized by oxygen annealing. Phys Status Solidi RRL, 14, 1900586(2020).

[4] H Dong, H W Xue, Q M He et al. Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material. J Semicond, 40, 011802(2019).

[5] H H Tippins. Optical absorption and photoconductivity in the band edge ofβ-Ga2O3. Phys Rev, 140, A316(1965).

[6] N Ueda, H Hosono, R Waseda et al. Anisotropy of electrical and optical properties inβ-Ga2O3 single crystals. Appl Phys Lett, 71, 933(1997).

[7] J A Kohn, J D Broder. Characterization ofβ-Ga2O3 and its alumina isomorph,θ-Al2O3. Am Mineral, 42, 398(1957).

[8] S I Stepanov, V I Nikolaev, V E Bougrov et al. Gallium oxide: Properties and applications - A review. Rev Adv Mater Sci, 44, 63(2016).

[9] S J Pearton, J C Yang, P H Cary et al. A review of Ga2O3 materials, processing, and devices. Appl Phys Rev, 5, 011301(2018).

[10] D Wang, L N He, Y Le et al. Characterization of single crystalβ-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD. Ceram Int, 46, 4568(2020).

[11] Q Cao, L N He, H D Xiao et al. β-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD. Mater Sci Semicond Process, 77, 58(2018).

[12] W Mi, J Ma, C N Luan et al. Characterization ofβ-Ga2O3 epitaxial films grown on MgO (111) substrates by metal-organic chemical vapor deposition. Mater Lett, 87, 109(2012).

[13] W Mi, C N Luan, Z Li et al. Ultraviolet-green photoluminescence ofβ-Ga2O3 films deposited on MgAl6O10 (100) substrate. Opt Mater, 35, 2624(2013).

[14] C Qian, J Sun, L Zhang et al. Crystal-domain orientation and boundary in highly ordered organic semiconductor thin film. J Phys Chem C, 119, 14965(2015).

[15] S Nakagomi, Y Kokubun. Crystal orientation ofβ-Ga2O3 thin films formed onc-plane and a-plane sapphire substrate. J Cryst Growth, 349, 12(2012).

[16] F Boschi, M Bosi, T Berzina et al. Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD. J Cryst Growth, 443, 25(2016).

[17] Y Zhuo, Z M Chen, W B Tu et al. β-Ga2O3 versus ε-Ga2O3: Control of the crystal phase composition of gallium oxide thin film prepared by metal-organic chemical vapor deposition. Appl Surf Sci, 420, 802(2017).

[18] D Q Hu, Y Wang, S W Zhuang et al. Surface morphology evolution and optoelectronic properties of heteroepitaxial Si-dopedβ-Ga2O3 thin films grown by metal-organic chemical vapor deposition. Ceram Int, 44, 3122(2018).

[19] J W Wu, W Mi, Z C Yang et al. Influence of annealing on the structural and optical properties of gallium oxide films deposited on c-sapphire substrate. Vacuum, 167, 6(2019).

[20] J Q Wei, K Kim, F Liu et al. β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy. J Semicond, 40, 012802(2019).

[21] Y Oshima, E G Vίllora, K Shimamura. Quasi-heteroepitaxial growth ofβ-Ga2O3 on off-angled sapphire (0001) substrates by halide vapor phase epitaxy. J Cryst Growth, 410, 53(2015).

[22] W L Xu, J C Shi, Y W Li et al. Study ofβ-Ga2O3 films hetero-epitaxially grown on off-angled sapphire substrates by halide vapor phase epitaxy. Mater Lett, 289, 129411(2021).

[23] S Rafique, L Han, A T Neal et al. Towards high-mobility heteroepitaxialβ-Ga2O3 on sapphire–dependence on the substrate off-axis angle. Phys Status Solidi A, 215, 1700467(2018).

[24] T Zhang, Z G Hu, Y F Li et al. Investigation on theβ-Ga2O3 deposited on off-angled sapphire (0001) substrates. J Lumin, 233, 117928(2021).

[25] I Bryan, Z Bryan, S Mita et al. Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides. J Cryst Growth, 438, 81(2016).

[26] M H Xie, S H Cheung, L X Zheng et al. Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy. Phys Rev B, 61, 9983(2000).

[27] J B Varley, A Janotti, C Franchini et al. Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides. Phys Rev B, 85, 081109(2012).

[28] C H Ho, C Y Tseng, L C Tien. Thermoreflectance characterization of beta-Ga2O3 thin-film nanostrips. Opt Express, 18, 16360(2010).

Tools

Get Citation

Copy Citation Text

Yabao Zhang, Jun Zheng, Peipei Ma, Xueyi Zheng, Zhi Liu, Yuhua Zuo, Chuanbo Li, Buwen Cheng. Growth and characterization ofβ-Ga₂O₃ thin films grown on off-angled Al₂O₃ substrates by metal-organic chemical vapor deposition[J]. Journal of Semiconductors, 2022, 43(9): 092801

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Articles

Received: Jan. 13, 2022

Accepted: --

Published Online: Nov. 17, 2022

The Author Email: Zheng Jun (zhengjun@semi.ac.cn)

DOI:10.1088/1674-4926/43/9/092801

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology