Temperature dependency of InGaAs/InP single photon avalanche diode for 1 550 nm photons

Shuai Wang; Qin Han; Han Ye; Liyan Geng; Ziqing Lu; Feng Xiao; Fan Xiao

doi:10.3788/IRLA20210453

Infrared and Laser Engineering, Volume. 50, Issue 11, 20210453(2021)

Temperature dependency of InGaAs/InP single photon avalanche diode for 1 550 nm photons

Shuai Wang^1,2, Qin Han^1,2,3、*, Han Ye^1,2, Liyan Geng^1,2, Ziqing Lu^1,2, Feng Xiao^1,2, and Fan Xiao^1,2

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

show less

Equations(3)

$ \frac{{\Delta {V_{{\rm{br}}}}}}{{\Delta T}} = \left[ {\left( {42.5 \times {X_{\rm{d}}}} \right) + 0.5} \right] \times \frac{\omega }{{{X_{\rm{d}}}}} $

(1)

View in Article

$ PDE = {P_{{\rm{trigger}}}} \times QE $

(2)

View in Article

$ {\rm{DCR}} \propto {n_{\rm{i}}}/{\tau _{\rm{e}}} \propto {T^2}\mathit{{\rm{exp}}}\left( { - {E_{\rm{a}}}/kT} \right) $

(3)

Shuai Wang, Qin Han, Han Ye, Liyan Geng, Ziqing Lu, Feng Xiao, Fan Xiao. Temperature dependency of InGaAs/InP single photon avalanche diode for 1 550 nm photons[J]. Infrared and Laser Engineering, 2021, 50(11): 20210453

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Infrared technology and application

Received: May. 10, 2021

Accepted: --

Published Online: Dec. 7, 2021

The Author Email: Han Qin (hanqin@semi.ac.cn)

DOI:10.3788/IRLA20210453

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology