Journal of Semiconductors, Volume. 43, Issue 8, 082001(2022)
Valley dynamics of different excitonic states in monolayer WSe2 grown by molecular beam epitaxy
Fig. 1. (Color online) (a) AFM micrography of the monolayer WSe2 grown on sapphire substrate, the inset is the height profile of the monolayer MBE-WSe2. (b) Room temperature PL spectra of the as-grown monolayer WSe2 on sapphire and sapphire substrate itself. (c) The PL spectra of MBE-WSe2 monolayer as a function of temperature. (d) PL spectrum and Gaussian fit of MBE-WSe2 monolayer measured at 10 K.
Fig. 2. (Color online) (a) Normalized transient differential reflectivity (ΔR/R) and (b) TRKR signals, with respect to the peak values measured at various probe energies in resonance with A exciton (A) and trion (T), respectively, for MBE-WSe2 monolayer. Here pump energies are all set at 1.879 eV, and the measured temperature is 10 K. The inset in (b) shows the normalized TRKR response measured under excitation of right- (σ+, red trace) and left- (σ−, blue trace) circularly polarized pump beam, with the probe energy to be resonant with A exciton.
Fig. 3. (Color online) (a) Temperature-dependent TRKR responses and their fittings (solid lines) probed for trion, pump and probe photon energies are set to be 1.879 and 1.722 eV, respectively. (b) Temperature-dependent valley relaxation time deduced from results in (a). (c) TRKR measured at various pump energies with a fixed probe energy of 1.710 eV at 10 K. The solid lines are fitting results. (d) The extracted long valley lifetime τv3 as a function of pump wavelength at 10 K.
Fig. 4. (Color online) Schematics of the bright and dark trion states in WSe2. (a) A bright singlet trion and (d) a bright triplet trion; when optically excited in theK valley of n-doped WSe2. (b), (c), (e), and (f) illustrate the possible conversion channels from bright to dark trions under phonon- or defect-assisted scattering.
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Shengmin Hu, Jialiang Ye, Ruiqi Liu, Xinhui Zhang. Valley dynamics of different excitonic states in monolayer WSe2 grown by molecular beam epitaxy[J]. Journal of Semiconductors, 2022, 43(8): 082001
Category: Articles
Received: Jan. 27, 2022
Accepted: --
Published Online: Aug. 23, 2022
The Author Email: Zhang Xinhui (xinhuiz@semi.ac.cn)