Journal of Semiconductors, Volume. 43, Issue 8, 082401(2022)

A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC

Wenjing Xu1,2, Jie Chen1、*, Zhangqu Kuang3, Li Zhou1, Ming Chen1, and Chengbin Zhang1
Author Affiliations
  • 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Will Semiconductor Co. Ltd., Shanghai 201210, China
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    Figures & Tables(14)
    Block diagram of the overall architecture.
    4T-PPD architecture.
    (Color online) PPD shape and potential profile: (a) conventional rectangle shaped, (b) proposed five-finger shaped.
    Column circuit of the SS-ADC.
    Timing diagram for dual correlated double sampling.
    Dual-mode counting method: (a) circuit, (b) timing diagram.
    Chip photograph and layout.
    (a) Timing diagram for lag test. (b) Measured lag curves with different shaped PPD.
    Measured photo response curves of five-finger shaped PPD with different transfer gate voltage.
    Measured photon transfer curve.
    Captured image from the fabricated sensor.
    (a) Measured Digital codes of the 644th column without dual-mode counting. (b) Measured Digital codes of the 644th column with dual-mode counting.
    • Table 0. Chip power consumption.

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      Table 0. Chip power consumption.

      ParameterVoltage (V)Current (A)Power consumption (mW)
      Pixel and analog1.510.3515.525
      Digital1.216.9620.352
      I/O1.80.030.054
      Sum35.931
    • Table 0. Comparison with other published CIS.

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      Table 0. Comparison with other published CIS.

      ParameterThis workJSSC[6]TCASI[17]Sensor[18]JSSC[4]
      * For fair comparison, conversion gain is assumed by 126.4 μV/e.
      Process (nm)1101101109065
      Pixel pitch (µm) 2.85.06.55.64.0
      Pixel type4T PPD4T PPD4T PPD4T PPDDigital
      Pixel resolution1288 × 728640 × 480320 × 240128 × 128960 × 720128 × 128
      Frame rate (fps)3015152283532
      Power supply (V)1.5/1.23.3/1.80.93.3/1.52.8/1.50.5
      Dynamic range (dB)67.3695068.966.742
      Power consumption (mW)362.280.045540280.0088
      Random noise (erms) 1.555.583.73.25*3.73*416
      FoM (e·nJ) 1.982.723.3134.84.326.98
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    Wenjing Xu, Jie Chen, Zhangqu Kuang, Li Zhou, Ming Chen, Chengbin Zhang. A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC[J]. Journal of Semiconductors, 2022, 43(8): 082401

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    Paper Information

    Category: Articles

    Received: Nov. 9, 2021

    Accepted: --

    Published Online: Aug. 23, 2022

    The Author Email: Chen Jie (jchen@ime.ac.cn)

    DOI:10.1088/1674-4926/43/8/082401

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