Researching | Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET

Journal of Semiconductors, Volume. 43, Issue 8, 082802(2022)

Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET

Lixin Tian^1、*, Zechen Du¹, Rui Liu¹, Xiping Niu¹, Wenting Zhang¹, Yunlai An¹, Zhanwei Shen², Fei Yang^1、**, and Xiaoguang Wei¹

Author Affiliations

¹State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute Co., Ltd., Beijing 102209, China

²Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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References(13)

[1] B X Sun, R B Xie, C Yu et al. Structural characterization of SiC nanoparticles. J Semicond, 38, 103002(2017).

[2] C Zeng, L F Deng, Z J Li et al. Experimental comparison of SiC GTO and ETO for pulse power applications. J Semicond, 39, 124017(2018).

[6] K Mainali, R X Wang, J Sabate et al. Current sharing and overvoltage issues of paralleled SiC MOSFET modules. 2019 IEEE Energy Convers Congr Expo ECCE, 2413(2019).

[7] J J Chen, X Jiang, Z J Li et al. Investigation on effects of thermal stress on SiC MOSFET degradation through power cycling tests. 2020 IEEE Applied Power Electronics Conference and Exposition, 1106(2020).

[8] H Bencherif, A Yousfi, L Dehimi et al. Analysis of Al2O3 high-k gate dielectric effect on the electrical characteristics of a 4H-SiC low-power MOSFET. 2019 1st International Conference on Sustainable Renewable Energy Systems and Applications, 1(2019).

[9] S Wirths, A Mihaila, G Romano et al. Study of 1.2kV high-k SiC power MOSFETS under harsh repetitive switching conditions. 2021 33rd International Symposium on Power Semiconductor Devices and ICs, 107(2021).

[10] S Fukunaga, H Takayama, T Hikihara. A study on switching surge voltage suppression of SiC MOSFET by digital active gate drive. 2021 IEEE 12th Energy Conversion Congress & Exposition(2021).

[11] A Agarwal, B J Baliga, M M A Francois et al. 3.3 kV 4H-SiC planar-gate MOSFETs manufactured using Gen-5 PRESiCE™ technology in a 4-inch wafer commercial foundry. Southeastcon 2021, 1(2021).

[12] A O Konstantinov, Q Wahab, N Nordell et al. Ionization rates and critical fields in 4H silicon carbide. Appl Phys Lett, 71, 90(1997).

[13] L X Tian, F Yang, X P Niu et al. Development and analysis of 6500V SiC power MOSFET. 2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors, 6(2021).

[14] R K Chanana, K McDonald, M di Ventra et al. Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures. Appl Phys Lett, 77, 2560(2000).

[15] P Fiorenza, A Frazzetto, A Guarnera et al. Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors. Appl Phys Lett, 105, 142108(2014).

[16] U Karki, F Z Peng. Precursors of gate-oxide degradation in silicon carbide MOSFETs. 2018 IEEE Energy Conversion Congress and Exposition, 857(2018).

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Lixin Tian, Zechen Du, Rui Liu, Xiping Niu, Wenting Zhang, Yunlai An, Zhanwei Shen, Fei Yang, Xiaoguang Wei. Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET[J]. Journal of Semiconductors, 2022, 43(8): 082802

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Paper Information

Category: Articles

Received: Mar. 8, 2022

Accepted: --

Published Online: Aug. 23, 2022

The Author Email: Tian Lixin (tianlixin0526@163.com), Yang Fei (yangsenji@163.com)

DOI:10.1088/1674-4926/43/8/082802

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